Product advantage
High resolution 2μm/2μm(L/S)
Product advantage
High resolution 2μm/2μm(L/S)
Product advantage
Die level Distortion and focal surface
Real-time compensation
Product advantage
Engraving accuracy 0.5µm
Product advantage
The living layout design has no mask size limit
Wafer size | 100/150/200/300mmWafer(selectable) |
Analyze | 2μm L/S |
Linewidth accuracy | ±10% |
Depth of focus | 20μm |
Front engraving accuracy | 1μm |
Imaging material | photoresist(PR) |
Light source spectrum | 405±5nm |
capacity | 40WPH@12inch |
Exposure energy | 20-1000mj/cm² or higher |
Total power of light source | 6W |
Data entry | GDSII, Gerber274X, ODB++ |
Applicable technology | Frontal exposure、The right side Alignment |
Single power supply | AC380V-50HZ-8KW(Primary equipment) |
Weight per unit | 2000kg |
Overall dimension(L×W×H) | 1810mmL×1700mmW×2105mmH |
Temperature/humidity | 22℃±1℃, 40%-60%(non-condensation) |
OverlayCompensation | fixed Overlay、Auto Overlay |