DPS-02

Product advantage

High resolution 2μm/2μm(L/S)

Product advantage

Die level Distortion and focal surface
Real-time compensation

Product advantage

Engraving accuracy 0.5µm

Product advantage

The living layout design has no mask size limit

EQUIPMENT PARAMETERS
Wafer size 100/150/200/300mmWafer(selectable)
Analyze 2μm L/S
Linewidth accuracy ±10%
Depth of focus 20μm
Front engraving accuracy 1μm
Imaging material photoresist(PR)
Light source spectrum 405±5nm
capacity 40WPH@12inch
Exposure energy 20-1000mj/cm² or higher
Total power of light source 6W
Data entry GDSII, Gerber274X, ODB++
Applicable technology Frontal exposure、The right side Alignment
Single power supply AC380V-50HZ-8KW(Primary equipment)
Weight per unit 2000kg
Overall dimension(L×W×H) 1810mmL×1700mmW×2105mmH
Temperature/humidity 22℃±1℃, 40%-60%(non-condensation)
OverlayCompensation fixed Overlay、Auto Overlay